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Preliminary data
High Speed IGBT
Short Circuit SOA Capability
VCES
IC(25) 20 A 20 A
VCE(sat) 2.5 V 3.0 V
IXSH10N60 IXSH10N60A
600 V 600 V
TO-247 AD Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s 300 Mounting torque Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TJ = 125C, RG = 150 Clamped inductive load, L = 300 H VGE = 15 V, VCE = 360 V, TJ = 125C RG = 82 , non repetitive TC = 25C Maximum Ratings
C (TAB)
600 600 20 30 20 10 40 ICM = 20 @ 0.8 VCES 10 100 -55 ... +150 150 -55 ... +150
V V V V A A A A s W C C C
G
C
E
G = Gate E = Emitter
C = Collector Tab = Collector
Features * International standard packages
* * * * *
Guaranteed Short Circuit SOA capability Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Fast Fall Time for switching speeds up to 20 kHz
1.13/10 Nm/lb.in. 6g C
Applications Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 3.5 TJ = 25C TJ = 125C 6.5 200 1 100 10N60 10N60A 2.5 3.0 V V A mA nA V V Advantages
* * *
AC motor speed control Uninterruptible power supplies (UPS) Welding
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 250 A, VGE = 0 V = 750 A, VCE = VGE
* *
VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V
Easy to mount with 1 screw (isolated mounting screw hole) High power density
(c) 1996 IXYS All rights reserved
95562B(10/96)
IXSH10N60
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 2 S
IXSH10N60A
TO-247 AD Outline
gfs
I C = IC90; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 % VGE = 15 V, VCE = 10 V
IC(on) Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff
50 750 125 30 40 12 20 100 200 250 175 720 0.75 1.2 100 200 1.0 300 400 1.5 1.25 0.25
A pF pF pF nC nC nC ns ns ns ns ns mJ mJ ns ns mJ ns ns mJ K/W K/W
e
P
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
80
Dim.
Inductive load, T J = 25C IC = IC90, VGE = 15 V, L = 300 H, VCE = 0.8 VCES, RG = 150
Note 1 td(on) tri Eon td(off) tfi Eoff RthJC RthCK Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 300 H, VCE = 0.8 VCES, RG = 150 Note 1
10N60A 10N60 10N60A 10N60
750 410 1.2 1.9
Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
10N60AU1 10N60AU1
Notes:
1.
Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or RG values. Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway.
2.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025
(c) 1996 IXYS All rights reserved
IXSH10N60
IXSH10N60A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025

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